- Tytuł:
- Impact of the etching time and current density on Capacitance-Voltage characteristics of P-type of porous silicon
- Autorzy:
-
Hadi, Hasan A.
Abood, Tareq H.
Mohi, Ali T.
Karim, Mahmood S. - Powiązania:
- https://bibliotekanauki.pl/articles/1178661.pdf
- Data publikacji:
- 2017
- Wydawca:
- Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
- Tematy:
-
electrochemical etching
heterojunction
porous silicon
thin films - Opis:
- In This paper, electrochemical etching teqniques was using to formation of nano crystalline porous silicon layer on p-type Si substrates. Measurement of capacitance – voltage characteristics at various etching time and current densities were used for calculated built in voltage and type of heterojunction. The built in voltage values were decreased with increasing etching time and current densities for both anisotype Al/PS/p-Si/Al heterojunction. These characteristics are interpreted by assuming the abrupt heterojunction model. The effect of different etching time and current densities on electrical properties of PS have been investigated.
- Źródło:
-
World Scientific News; 2017, 67, 2; 149-160
2392-2192 - Pojawia się w:
- World Scientific News
- Dostawca treści:
- Biblioteka Nauki
Artykuł