Temat: modeling circuit - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: New approach to power semiconductor devices modeling
Autorzy:: Napieralski, A.
Napieralska, M.
Powiązania:: https://bibliotekanauki.pl/articles/308039.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: power device modeling
SPICE
circuit simulation
VDMOS
PIN diode
IGBT
web-based simulation
Opis:: The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 80-89
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Induction machine behavioral modeling for prediction of EMI propagation
Autorzy:: Turzyński, M.
Powiązania:: https://bibliotekanauki.pl/articles/200389.pdf
Data publikacji:: 2017
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: circuit simulation
wideband modeling
inverter-fed IM model
EMI prediction
symulacja obwodów
model IM
EMI
szerokopasmowe modelowanie
Opis:: This paper presents the results of wideband behavioral modeling of an induction machine (IM). The proposed solution enables modeling the IM differential- and common-mode impedance for a frequency range from 1 kHz to 10 MHz. Methods of parameter extraction are derived from the measured IM impedances. The developed models of 1.5 kW and 7.5 kW induction machines are designed using the Saber Sketch scheme editor and simulated in the SABER simulator. Modeling validation is based on prediction of electromagnetic interference (EMI) emissions of common-mode and differential-mode current spectra of experimental inverter-fed IM drives.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2017, 65, 2; 247-254
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Modeling the characteristics of high-k HfO2-Ta2O5 capacitor in Verilog-A
Autorzy:: Angelov, G. V.
Powiązania:: https://bibliotekanauki.pl/articles/398142.pdf
Data publikacji:: 2011
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: modelowanie elementów elektronicznych
model kompaktowy
symulacja obwodu
dielektryk bramkowy o wysokiej przenikalności elektrycznej
Verilog-A
Spectre
device modeling
compact models
circuit simulation
high-k gate dielectric
Opis:: A circuit simulation model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer is developed and coded in Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against experimental measurements of the HfO2-Ta2O5 slack structure.
Źródło:: International Journal of Microelectronics and Computer Science; 2011, 2, 3; 105-112
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Surface Potential Modeling of a High-k HfO2-Ta2O5 Capacitor in Verilog-A
Autorzy:: Angelov, G. V.
Powiązania:: https://bibliotekanauki.pl/articles/397997.pdf
Data publikacji:: 2012
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: modelowanie elementów elektronicznych
model kompaktowy
PSP
symulacja obwodu
dielektryk bramkowy o wysokiej przenikalności elektrycznej
Verilog-A
Spectre
device modeling
compact models
circuit simulation
high-k gate dielectric
Opis:: A compact model of a high-k HfO2-Ta2O5 mixed layer capacitor stack is developed in Matlab. Model equations are based on the surface potential PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language and it is implemented as external library in Spectre circuit simulator within Cadence CAD system. The results are validated against the experimental measurements of the HfO2-Ta2O5 stack structure.
Źródło:: International Journal of Microelectronics and Computer Science; 2012, 3, 3; 111-118
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

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