Temat: atomic property - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Electrical Characteristics of Tin Oxide Films Grown by Thermal Atomic Layer Deposition
Autorzy:: Yoon, Seong Yu
Choi, Byung Joon
Powiązania:: https://bibliotekanauki.pl/articles/352926.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: atomic layer deposition
tin oxide
electrical property
oxygen adsorption
Opis:: Tin dioxide (SnO₂ ) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO₂ films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino)tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO₂ films are grown on SiO₂ /Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO₂ films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO₂ film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.
Źródło:: Archives of Metallurgy and Materials; 2020, 65, 3; 1041-1044
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
Autorzy:: Ryu, Sung Yeon
Yun, Hee Ju
Lee, Min Hwan
Choi, Byung Joon
Powiązania:: https://bibliotekanauki.pl/articles/2049285.pdf
Data publikacji:: 2021
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: gadolinium oxide
Gd2O3
rare-earth oxide
atomic layer deposition
hydrophobicity
electrical property
Opis:: Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.
Źródło:: Archives of Metallurgy and Materials; 2021, 66, 3; 755-758
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

Artykuł

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