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Wyszukujesz frazę "Zinc oxide" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Structured Analysis of Nanostructured Zinc Oxide (ZnO) Thin Films Deposited by Sol-Gel
Autorzy:
Hussin, Rosniza
Hanafi, F.
Rashid, R. A.
Harun, Z.
Kamdi, Z.
Ibrahim, S. A.
Ainuddin, A. R.
Rahman, W.
Leman, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/2134100.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
sol-gel
zinc oxide
ZnO
thin films
nanostructured
Opis:
In this work, zinc oxide (ZnO) thin films are deposited on glass substrate using the sol-gel spin coating technique. The effect of annealing temperature on structural properties was investigated. The ZnO sol-gel was produced from zinc acetate dehydrate as the starting material with iso-propanol alcohol as the stabilizer. The ratio was controlled, distilled water and diethanolamine as the solvent mixing on a magnetic stirrer for an hour under constant heat of 60°C. The ZnO thin film was deposited using the spin coating technique with the speed of 3000 rpm for 30 minutes before the sample undergoes pre-heat in the oven at the temperature of 100°C for 10 minutes. The sample was annealing in the furnace for an hour at 200°C, 350°C, and 500°C. The X-ray diffraction (XRD) analysis confirms that hexagonal wurtzite structure with zincite and zinc acetate hydroxide hydrate composition. The thin films surface roughness was analyzed using an atomic force microscope (AFM) and scanning electron microscope (SEM) for surface morphology observation.
Źródło:
Archives of Metallurgy and Materials; 2022, 67, 3; 1055--1060
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, Electrical, and Optical Properties of ZnO Films Grown by Atomic Layer Deposition at Low Temperature
Autorzy:
Park, Ji-Young
Weon, Ye Bin
Jung, Myeong Jun
Choi, Byung Joon
Powiązania:
https://bibliotekanauki.pl/articles/2174578.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
zinc oxide
ZnO
atomic layer deposition
low temperature growth
optoelectronic properties
Opis:
Zinc oxide (ZnO) is a prominent n-type semiconductor material used in optoelectronic devices owing to the wide bandgap and transparency. The low-temperature growth of ZnO thin films expands diverse applications, such as growth on glass and organic materials, and it is also cost effective. However, the optical and electrical properties of ZnO films grown at low temperatures may be inferior owing to their low crystallinity and impurities. In this study, ZnO thin films were prepared by atomic layer deposition on SiO2 and glass substrates in the temperature range of 46-141℃. All films had a hexagonal würtzite structure. The carrier concentration and electrical conductivity were also investigated. The low-temperature grown films showed similar carrier concentration (a few 1019 cm-3 at 141°C), but possessed lower electrical conductivity compared to high-temperature (>200°C) grown films. The optical transmittance of 20 nm thin ZnO film reached approximately 90% under visible light irradiation. Additionally, bandgap energies in the range of 3.23-3.28 eV were determined from the Tauc plot. Overall, the optical properties were comparable to those of ZnO films grown at high temperature.
Źródło:
Archives of Metallurgy and Materials; 2022, 67, 4; 1503--1506
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of changes in electrical resistance of zinc oxide nanostructures under the influence of variable gaseous environments
Autorzy:
Procek, M.
Pustelny, T.
Stolarczyk, A.
Maciak, E.
Powiązania:
https://bibliotekanauki.pl/articles/201073.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
zinc oxide
ZnO
flower-like nanostructures
gas sensor
wide gap semiconductors
electric properties of semiconductors
tlenek cynku
kwiatopodobne nanostruktury
czujnik gazu
właściwości elektryczne półprzewodników
Opis:
The paper deals with the investigations concerning the influence of the changing gas environment on electrical resistance of zinc oxide (ZnO) nanostructures. The investigated structures are wide-gap semiconductors with the morphology of ZnO flower-shaped agglomerates of nanostructures. The resistance changes of these nanostructures were tested under the influence of various gases such as nitrogen dioxide (NO2), hydrogen (H2), ammonia (NH3) and also of humidity changes of carrier gases. To clarify the mechanisms of physicochemical processes in ZnO nanostructures during their interaction with gaseous environments, investigations were performed in two different carrier gases, viz. in synthetic air and in nitrogen. The study was carried out at a structure temperature of 200◦C.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 4; 635-639
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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