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Wyszukujesz frazę "Gołaszewska, M." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors
Autorzy:
Struk, P.
Pustelny, T.
Gołaszewska, K.
Borysiewicz, M. A.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/200967.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ZnO
semiconductor
gas sensors
Zno
czujniki gazu
półprzewodnik
Opis:
The paper presents the results of investigations of zinc oxide (ZnO) layers as a potential sensing material, being affected by certain selected gaseous environments. The investigations concerned the optical transmission through thin ZnO layers in wide spectral ranges from ultraviolet to the near infrared. The effect of the gaseous environment on the optical properties of zinc oxide layers with a thickness of ~ 400 nm was analyzed applying various technologies of ZnO manufacturing. Three kinds of ZnO layers were exposed to the effect of the gaseous environment, viz.: layers with relatively slight roughness (RMS several nm), layers with a considerable surface roughness (RMS some score of nm) and layers characterized by porous ZnO structures. The investigations concerned spectral changes in the transmission properties of the ZnO layers due to the effect of such gases as: ammonia (NH3), hydrogen (H2), and nitrogen dioxide (NO2) in the atmosphere of synthetic air. The obtained results indicated the possibility of applying porous ZnO layered structures in optical gas sensors.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 4; 829-836
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
Autorzy:
Struk, P.
Pustelny, T.
Gołaszewska, K.
Borysiewicz, M. A.
Kamińska, E.
Wojciechowski, T.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/220412.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Wide band gap oxide semiconductors
ZnO
integrated optics structures
planar waveguides
Opis:
The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
Źródło:
Metrology and Measurement Systems; 2014, 21, 3; 401-412
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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