- Tytuł:
- Analysis and investigation of Schottky barrier MOSFET current injection with process and device simulation
- Autorzy:
-
Schwarz, Mike
Calvet, Laurie E.
Snyder, John P.
Krauss, Tillmann
Schwalke, Udo
Kloes, Alexander - Powiązania:
- https://bibliotekanauki.pl/articles/397926.pdf
- Data publikacji:
- 2018
- Wydawca:
- Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
- Tematy:
-
Poisson equation
device simulation
field emission
modeling
MOSFET
process simulation
Schottky barrier
Synopsys
TCAD
thermionic emission
tunneling current
równanie Poissona
emisja polowa
modelowanie
symulacja procesu
bariera Schottky'ego
emisja termoelektronowa
prąd tunelowy - Opis:
- In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. An improved structure containing topography is briefly discussed and further device simulations are applied with the latest physical models available. Key parameters are discussed and finally the results are compared with fabricated SB-MOSFETs in terms of accuracy and capability of process simulations.
- Źródło:
-
International Journal of Microelectronics and Computer Science; 2018, 9, 1; 1-8
2080-8755
2353-9607 - Pojawia się w:
- International Journal of Microelectronics and Computer Science
- Dostawca treści:
- Biblioteka Nauki
Artykuł