- Tytuł:
- Simulation framework and thorough analysis of the impact of barrier lowering on the current in SB-MOSFETs
- Autorzy:
-
Schwarz, M.
Calvet, L. E.
Snyde, J. P.
Krauss, T.
Schwalke, U.
Kloes, A. - Powiązania:
- https://bibliotekanauki.pl/articles/397793.pdf
- Data publikacji:
- 2017
- Wydawca:
- Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
- Tematy:
-
2D Poisson equation
device modeling
double-gate MOSFET
field emission
framework
Schottky barrier
Synopsys
TCAD
thermionic emission
thermionic current
tunneling current
dwuwymiarowe równanie Poissona
modelowanie elementów elektronicznych
dwubramkowy tranzystor MOS
emisja polowa
bariera Schottky'ego
emisja termoelektronowa
prąd termoelektronowy
prąd tunelowy - Opis:
- In this paper we present a simulation framework to account for the Schottky barrier lowering models in SBMOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus accurately predict the on- and off-current regions are adressed. Detailed investigations of these components are presented along with an improved Schottky barrier lowering model for field emission. Finally, a comparison for the transfer characteristics is shown for simulation and experimental data.
- Źródło:
-
International Journal of Microelectronics and Computer Science; 2017, 8, 2; 72-79
2080-8755
2353-9607 - Pojawia się w:
- International Journal of Microelectronics and Computer Science
- Dostawca treści:
- Biblioteka Nauki
Artykuł