Temat: IGBT - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Modelling the inﬂuence of self-heating on characteristics of IGBTs in the sub-threshold region
Autorzy:: Górecki, K.
Górecki, P.
Powiązania:: https://bibliotekanauki.pl/articles/397748.pdf
Data publikacji:: 2014
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: IGBT
electrothermal model
self-heating
SPICE
model elektrotermiczny
samonagrzewanie
Opis:: The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into account. The form of the electrothermal model of the considered transistor and equations describing this model are proposed. The correctness of the proposed model is veriﬁed experimentally during the operation of the examined transistor at different cooling conditions. Particular attention is paid to the non-typical course of characteristics of the considered device at weak excitation. The shape of the obtained characteristics is discussed and the inﬂuence of the sub-threshold effect in the input MOS structure on these characteristics is analysed.
Źródło:: International Journal of Microelectronics and Computer Science; 2014, 5, 4; 149-154
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT
Autorzy:: Górecki, Paweł
Powiązania:: https://bibliotekanauki.pl/articles/226814.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: DC-DC converter
IGBT
boost converter
averaged model
diode-transistor switch
modelling
SPICE
Opis:: DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diode-transistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.
Źródło:: International Journal of Electronics and Telecommunications; 2020, 66, 3; 555-560
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: New approach to power semiconductor devices modeling
Autorzy:: Napieralski, A.
Napieralska, M.
Powiązania:: https://bibliotekanauki.pl/articles/308039.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: power device modeling
SPICE
circuit simulation
VDMOS
PIN diode
IGBT
web-based simulation
Opis:: The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 80-89
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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