- Tytuł:
- SOI nanodevices and materials for CMOS ULSI
- Autorzy:
- Palestra, F.
- Powiązania:
- https://bibliotekanauki.pl/articles/308998.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
ballistic transport
gate misalignment
GIFBE
mobility enhancement
SOI
strain engineering
tunneling current - Opis:
- A review of recently explored new effects in SOI nanodevices and materials is given. Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented. The performance and physical mechanisms are also addressed in multi-gate Si, SiGe and Ge MOSFETs. The impact of gate misalignment or underlap, as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAMare also outlined.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 2; 3-13
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł