Temat: S-parameters - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Critical modeling issues of SiGe semiconductor devices
Autorzy:: Palankovski, V.
Selberherr, S.
Powiązania:: https://bibliotekanauki.pl/articles/308035.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe HBT
numerical simulation
band gap
mobility
small-signal simulation
S-parameters
Opis:: We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe heterojunction bipolar transistors (HBTs) by means of small-signal AC-analysis. Results from two-dimensional hydrodynamic simulations of SiGe HBTs are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 15-25
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Interconnections coupling through substrate for frequencies up to 100 GHz
Autorzy:: Gerakis, V
Hatzopoulos, A.
Powiązania:: https://bibliotekanauki.pl/articles/397752.pdf
Data publikacji:: 2014
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: substrate noise
interconnect coupling
substrate doping
S-parameters
Z-parameters
zakłócenia podłożowe
domieszkowanie substratu
parametry rozproszenia
parametry impedancji
Opis:: This work presents a study on the substrate noise coupling between two interconnects. A highly, a lightly and a uniformly doped substrate, approximating most modern technologies, are described. The three different doping profiles are simulated for various interconnect distances and different metal layers assuming a 65 nm bulk CMOS technology. A proper data analysis methodology is presented, including z and s parameters extraction and de-embedding procedure.
Źródło:: International Journal of Microelectronics and Computer Science; 2014, 5, 4; 144-148
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Automated parameter extraction of geometry dependent RF planar inductor model
Autorzy:: Durev, V. P.
Gadjeva, E. D.
Hristov, M. H.
Powiązania:: https://bibliotekanauki.pl/articles/397835.pdf
Data publikacji:: 2010
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: spiralne płaskie induktory
model RF
parametr ekstrakcji
S-parametry
genetyczny algorytm
planar spiral inductors
RF model
parameter extraction
S-parameters
genetic algorithm
Opis:: An approach is proposed in the present paper to parameter extraction of geometry dependent RF planar spiral inductor model. A direct extraction procedure is developed and realized in the Cadence PSpice and Cadence Probe environment based on the measured two-port S-parameters. To minimize the error for the full range of operation a Genetic Algorithm (GA) optimization procedure is applied in MATLAB environment. The approach is useful in RF model design, as the S-parameters can be easily measured for a given microelectronic technology. The proposed model extraction approach is characterized by a very good accuracy.
Źródło:: International Journal of Microelectronics and Computer Science; 2010, 1, 3; 257-262
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

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