- Tytuł:
- Challenges in ultrathin oxide layers formation
- Autorzy:
-
Beck, R.B.
Jakubowski, A.
Łukasiak, L.
Korwin-Pawłowski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/307646.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
silicon technology
oxidation
PECVD
RTO
gate oxide
ultrathin
layers - Opis:
- In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 27-34
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł