- Tytuł:
- The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE
- Autorzy:
-
Łozińska, Adriana
Badura, Mikołaj
Bielak, Katarzyna
Ściana, Beata
Tłaczała, Marek - Powiązania:
- https://bibliotekanauki.pl/articles/174236.pdf
- Data publikacji:
- 2020
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
photoluminescence
quantum cascade lasers
MOVPE
metalorganic vapour phase epitaxy - Opis:
- In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures.The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.
- Źródło:
-
Optica Applicata; 2020, 50, 2; 251-256
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł