- Tytuł:
- Charge-pumping characterization of FILOX vertical MOSFETs
- Autorzy:
-
Głuszko, G.
Łukasiak, L.
Ashburn, P. - Powiązania:
- https://bibliotekanauki.pl/articles/308623.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
charge-pumping
FILOX
interface traps
MOSFET
vertical MOSFET - Opis:
- This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 3; 73-77
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł