- Tytuł:
- High-temperature instability processes in SOI structures and MOSFETs
- Autorzy:
-
Nazarov, A.N.
Kilchytska, V.I.
Vovk, Ja.N.
Colinge, J.P. - Powiązania:
- https://bibliotekanauki.pl/articles/307654.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SOI
MOSFET
high-temperature
instability
ZMR
SIMOX - Opis:
- The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI structures are presented. The studies are focused mainly on electrical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high-temperature kink effects in SOI MOSFETs.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 18-26
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł