- Tytuł:
- Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design
- Autorzy:
-
Gomółka, E.
Markowska, O.
Kopytko, M.
Kowalewski, A.
Martyniuk, P.
Rogalski, A.
Rutkowski, J.
Motyka, M.
Krishna, S. - Powiązania:
- https://bibliotekanauki.pl/articles/201992.pdf
- Data publikacji:
- 2018
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
InAs/GaSb type-II superlattices
infrared detectors
barrier detectors
nBn detector
p-i-n detector
InAs
GaSb
detektory podczerwieni
detektor bariery
detektor nBn
detektory p-i-n - Opis:
- We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 μm at 80 K and increase of up to 5.6 μm at 290 K was found. Values of Varshni parameters, zero temperature bandgap E0 and empirical coefficients α and β were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.
- Źródło:
-
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2018, 66, 3; 317-323
0239-7528 - Pojawia się w:
- Bulletin of the Polish Academy of Sciences. Technical Sciences
- Dostawca treści:
- Biblioteka Nauki
Artykuł