Temat: InAs - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors
Autorzy:: Michalczewski, Krystian
Tsai, T. Y.
Martyniuk, P.
Wu, C. H.
Powiązania:: https://bibliotekanauki.pl/articles/201469.pdf
Data publikacji:: 2019
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: HOT
MWIR
T2SLs
InAs/InAsSb
photoresistors
fotorezystory
Opis:: We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K..
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 1; 141-145
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: InAs/InAsSb superlattice infrared detectors
Autorzy:: Ting, David Z.
Soibel, Alexander
Khoshakhlagh, Arezou
Keo, Sam A.
Rafol, Sir B.
Fisher, Anita M.
Hill, Cory J.
Pepper, Brian J.
Maruyama, Yuki
Gunapala, Sarath D.
Powiązania:: https://bibliotekanauki.pl/articles/2204211.pdf
Data publikacji:: 2023
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:: infrared detector
type-II superlattice
InAs/InAsSb
complementary barrier infrared detectors
strained layer superlattice
Opis:: Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.
Źródło:: Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144565
1230-3402
Pojawia się w:: Opto-Electronics Review
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
Autorzy:: Lubyshev, Dmitri
Fastenau, Joel M.
Kattner, Michael
Frey, Philip
Nelson, Scott A.
Flick, Ryan
Wu, Ying
Liu, Amy W. K.
Szymanski, Dennis E.
Martinez, Becky
Furlong, Mark J.
Dennis, Richard
Bundas, Jason
Sundaram, Mani
Powiązania:: https://bibliotekanauki.pl/articles/2204213.pdf
Data publikacji:: 2023
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:: focal plane arrays
InAs/InAsSb
photodetectors
long wavelength infrared type-II superlattice
metamorphic buffers
superlattice period reduction
Opis:: Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
Źródło:: Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
1230-3402
Pojawia się w:: Opto-Electronics Review
Dostawca treści:: Biblioteka Nauki

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