Temat: diode - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Comparison of Electrical Performances of Power Electronics Switches and an Effective Switch Selection Algorithm
Autorzy:: Zenk, H.
Powiązania:: https://bibliotekanauki.pl/articles/1031000.pdf
Data publikacji:: 2018-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: power electronics switches (PES)
switch selection algorithm (SSA)
IGBT
MOSFET
BJT
diode
Opis:: Electronics switches commonly used in power electronics circuits are the part of the electronics system depending on energy efficiency, circuit topology, switching matrix design, interaction with filter elements, and many other parameters. For the first new switch design prototype to identify of electrical efficiency of the semiconductor switch working with a system, it is very important that estimation of the variables saves time, labor, and economical resources. In this study, the new algorithm is proposed and applied to circuit estimate efficiency of power electronics switches. The current-voltage-power capacities, switching rate, power losses, physical dimensions, heating levels of power electronics switches used in the circuit are investigated and algorithmically estimated according to the result of experimental performance switches.
Źródło:: Acta Physica Polonica A; 2018, 133, 4; 897-901
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Comparison between thermal simulation results generated by PLECS software and laboratory measurements
Autorzy:: Mysiński, Wojciech
Sysło, Bartłomiej
Powiązania:: https://bibliotekanauki.pl/articles/377458.pdf
Data publikacji:: 2019
Wydawca:: Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:: thermal simulation
PLECS
buck converter
thermal time constant
IGBT
diode
power losses
Opis:: This article deals with the subject of simulation of power losses and thermal processes occurring in semiconductors, as illustrated by an example of a DC/DC buck converter. The simulations were performed in PLECS software. The results obtained from the program were compared with measurement results of a laboratory converter model. The physical model is based on the same components as assumed in the simulation. Similarly, the parameters of the transistor control signal were the same. During operation of the converter, the temperature changes were analyzed using a K-type thermocouple. Based on the obtained results of the temperature measurement in the steady state of the converter operation, the correctness of the simulation carried out in the PLECS program was verified and confirmed.
Źródło:: Poznan University of Technology Academic Journals. Electrical Engineering; 2019, 99; 29-40
1897-0737
Pojawia się w:: Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: New approach to power semiconductor devices modeling
Autorzy:: Napieralski, A.
Napieralska, M.
Powiązania:: https://bibliotekanauki.pl/articles/308039.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: power device modeling
SPICE
circuit simulation
VDMOS
PIN diode
IGBT
web-based simulation
Opis:: The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 80-89
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT
Autorzy:: Górecki, Paweł
Powiązania:: https://bibliotekanauki.pl/articles/226814.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: DC-DC converter
IGBT
boost converter
averaged model
diode-transistor switch
modelling
SPICE
Opis:: DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diode-transistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.
Źródło:: International Journal of Electronics and Telecommunications; 2020, 66, 3; 555-560
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

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