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    Wyświetlanie 1-6 z 6
    Tytuł:
    Modeling of HgCdTeLWIR detector for high operation temperature conditions
    Autorzy:
    Martyniuk, P.
    Gawron, W.
    Madejczyk, P.
    Rogalski, A.
    Piotrowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/220771.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    HgCdTe
    IR detector
    Auger suppression
    HOT detectors
    Opis:
    The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
    Źródło:
    Metrology and Measurement Systems; 2013, 20, 2; 159-170
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector
    Autorzy:
    Martyniuk, P.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/201922.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    barrier detectors
    unipolar barrier
    nBn
    HgCdTe
    photodetectors
    Opis:
    The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 ?m The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 1; 211-220
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Teoretyczna analiza właściwości heterozłącza pP⁺ w temperaturze pokojowej za pomocą zaawansowanej symulacji komputerowej
    Theoretical analysis of near-room temperature pP⁺ HgCdTe heterojunction using an advanced numerical method
    Autorzy:
    Gawron, W.
    Jóźwikowski, K.
    Kopytko, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/210677.pdf
    Data publikacji:
    2011
    Wydawca:
    Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
    Tematy:
    detektory podczerwieni
    HgCdTe
    heterozłącza
    infrared detectors
    heterojunctions
    Opis:
    Artykuł przedstawia wyniki obliczeń teoretycznych parametrów heterozłącza pP⁺ w temperaturze pokojowej wykonanych za pomocą zaawansowanej symulacji komputerowej. Dla porównania przedstawiono także wyniki obliczeń parametrów heterozłącza N⁺p. Wszystkie obliczenia wykonane są dla temperatury 300 K przy oświetlaniu złącza od strony obszaru silnie domieszkowanego promieniowaniem o długości fali 10,6 µm. Wykorzystano oryginalne metody i programy komputerowe opracowane w Zakładzie Fizyki Ciała Stałego.
    We report on the results of theoretical calculation of near-room temperature HgCdTe pP⁺ heterojunction. The calculated parameters of pP⁺ junction were compared with parameters of N⁺p junction. All the analyses were done under 300 K temperatures after illuminating the structure from a highly doped layer by the light with a wavelength of 10.6 µm. We have taken advantage of original methods of numerical simulation using computer programmes prepared at the Institute of Applied Physics.
    Źródło:
    Biuletyn Wojskowej Akademii Technicznej; 2011, 60, 4; 161-176
    1234-5865
    Pojawia się w:
    Biuletyn Wojskowej Akademii Technicznej
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
    Autorzy:
    Manyk, Tetiana
    Rutkowski, Jarosław
    Madejczyk, Paweł
    Gawron, Waldemar
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/2074201.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    HgCdTe
    MWIR detectors
    dark current
    I-V characteristics
    recombination
    Opis:
    A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
    Źródło:
    Opto-Electronics Review; 2022, 30, 2; art. no. e141596
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    HgCdTe energy gap determination from photoluminescence and spectral response measurements
    Autorzy:
    Murawski, Krzysztof
    Kopytko, Małgorzata
    Madejczyk, Paweł
    Majkowycz, Kinga
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/2204344.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    infrared detectors
    HgCdTe
    photoluminescence
    spectral responsivity
    semiconductor energy gap
    Opis:
    The temperature dependence of photoluminescence spectra has been studied for the HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and shallow/deep defects which makes it difficult to evaluate the material bandgap. In most of the published reports, the photoluminescence spectrum containing multiple peaks is analyzed using a Gaussian fit to a particular peak. However, the determination of the peak position deviates from the energy gap value. Consequently, it may seem that a blue shift with increasing temperature becomes apparent. In our approach, the main peak was fitted with the expression proportional to the product of the joint density of states and the Boltzmann distribution function. The energy gap determined on this basis coincides in the entire temperature range with the theoretical Hansen dependence for the assumed Cd molar composition of the active layer. In addition, the result coincides well with the bandgap energy determined on the basis of the cut-off wavelength at which the detector response drops to 50% of the peak value.
    Źródło:
    Metrology and Measurement Systems; 2023, 30, 1; 183--194
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MCT heterostructures for higher operating temperature infrared detectors designed in Poland
    Autorzy:
    Madejczyk, Paweł
    Gawron, Waldemar
    Sobieski, Jan
    Martyniuk, Piotr
    Rutkowski, Jarosław
    Powiązania:
    https://bibliotekanauki.pl/articles/2204223.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    MCT
    HgCdTe
    metal organic chemical vapour deposition
    infrared detectors
    higher operating temperature
    Opis:
    This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 μm to 14 μm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144551
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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