- Tytuł:
- CVD growth of high speed SiGe HBTs using SiH4
- Autorzy:
-
Radamson, H.H.
Grahn, J.
Landgren, G. - Powiązania:
- https://bibliotekanauki.pl/articles/309308.pdf
- Data publikacji:
- 2000
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SiGe
epitaxy
HBT
silane - Opis:
- The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650°C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2000, 3-4; 10-14
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł