- Tytuł:
- Recent developments in vertical MOSFETs and SiGe HBTs
- Autorzy:
-
Hall, S.
Buiu, O.
Ashburn, P.
de Groot, K. - Powiązania:
- https://bibliotekanauki.pl/articles/308031.pdf
- Data publikacji:
- 2004
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
vertical MOSFET
HBT
SOI - Opis:
- There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI-CMOS.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2004, 1; 26-35
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł