Autor: Sochacki, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: GaN-based soft-switched active power buffer operating at ZCS – problems of start-up and shut-down
Autorzy:: Rąbkowski, J.
Król, K.
Zdanowski, M.
Sochacki, M.
Powiązania:: https://bibliotekanauki.pl/articles/201868.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: GaN
power inverter
active buffer
Opis:: This paper describes practical issues related to control of the active power buffer (APB) developed for a 2 kVA single-phase inverter. The buffer is designed using the latest GaN HEMTs controlled with triangular current mode to reduce switching losses, however, the switching frequency should be limited to 1 MHz. In the case of the presented analogue-digital controller, frequency is influenced by a reference current of the APB and circuit. Therefore, the operation at start-up and shut-down is especially challenging. A modified control algorithm that also includes pre-charging and discharging process of the energy buffer is presented and experimentally verified by series of tests of the 2 kVA GaN based inverter with the APB.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 4; 785-792
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
Autorzy:: Taube, A.
Sochacki, M.
Szmidt, J.
Kamińska, E.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/226802.pdf
Data publikacji:: 2014
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: gallium nitride
MOS-HEMT
high electron mobility
transistor
AlGaN
GaN
simulation
Opis:: The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
Źródło:: International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

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