Autor: Sarzała, Robert - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics
Autorzy:: Śpiewak, Patrycja
Wasiak, Michał
Sarzała, Robert P.
Powiązania:: https://bibliotekanauki.pl/articles/173286.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: GaN
computer simulations
tunnel junction
VCSEL
vertical-cavity surface-emitting laser
Opis:: This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing waveanti-node, and positioning of the active area at different anti-nodes are considered.
Źródło:: Optica Applicata; 2020, 50, 2; 301-310
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers
Autorzy:: Dąbrówka, Dominika
Sarzała, Robert P.
Wasiak, Michał
Kafar, Anna
Perlin, Piotr
Saba, Kiran
Powiązania:: https://bibliotekanauki.pl/articles/2174849.pdf
Data publikacji:: 2022
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:: GaN
diode laser
array with surface light emission
thermal analysis
Opis:: This paper presents the results of a thermal computational analysis of a two-dimensional laser array emitting from a surface. The array consisted of eight equispaced ridge-waveguide edge-emitting nitride diode lasers. Surface emission of light was obtained using mirrors inclined at 45°. The authors investigate how the geometrical dimensions of the array emitters and their pitch in the array affect the increase and distribution of temperature in the device. They also examine the influence on the temperature increase and distribution of the thickness of the insulating SiO₂, the thickness of the gold layer forming the top contact of the laser, and the thickness of the GaN substrate, as well as the influence of the ridge-waveguide width.
Źródło:: Opto-Electronics Review; 2022, 30, 4; art. no. e144115
1230-3402
Pojawia się w:: Opto-Electronics Review
Dostawca treści:: Biblioteka Nauki

Artykuł

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