- Tytuł:
- Post-implantation defects instability under 1 MeV electron irradiation in GaAs
- Autorzy:
-
Warchoł, S.
Rzewuski, H.
Krynicki, J.
Grötzschel, R. - Powiązania:
- https://bibliotekanauki.pl/articles/146724.pdf
- Data publikacji:
- 2000
- Wydawca:
- Instytut Chemii i Techniki Jądrowej
- Tematy:
-
electron annealing
GaAs
implantation - Opis:
- The influence of 1 MeV electron irradiation on the stability of post-implantation defects in GaAs has been investigated. The n-type GaAs wafers of <100> orientation were implanted with 150 keV As+ ions below the amorphization threshold at RT using the implantation dose of 2×1013 ions cm–2 at a constant flux of 0.1 žA cm–2. Then the implanted samples were irradiated with a scanned beam of 1 MeV electrons from a Van de Graaff accelerator in a dose range (0.5–5.0)×1017 cm–2 at 320 K. RBS and channeling spectroscopy of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after 1 MeV irradiations. New results of an "oscillatory" behaviour of the damage level as a function of 1 MeV electron fluence are presented.
- Źródło:
-
Nukleonika; 2000, 45, 4; 225-228
0029-5922
1508-5791 - Pojawia się w:
- Nukleonika
- Dostawca treści:
- Biblioteka Nauki
Artykuł