Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Gamalath, K. A. I. L. Wijewardena" wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-4 z 4
    Tytuł:
    Three dimensional photonic crystals
    Autorzy:
    Dissanayake, S. E.
    Wijewardena Gamalath, K. A. I. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1194049.pdf
    Data publikacji:
    2015
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Fcc lattice and diamond lattice
    GaAs
    Photonic crystal
    dielectric contrast
    filling fraction
    plane wave expansion
    Opis:
    The plane wave expansion method was implemented in modelling and simulating the band structures of three dimensional photonic crystals with FCC lattice formed from air spheres drilled in GaAs and diamond lattice formed by GaAs spheres drilled in air. Both these structures lead to a complete band gap not allowing EM waves with the frequency of the band gap to propagate through the crystal in any direction. Diamond lattice photonic crystal has a complete band gap for a wider range of filling fraction than FCC photonic crystal and also it has a wider band gap width.
    Źródło:
    World Scientific News; 2015, 12; 12-23
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Simulation of two dimensional photonic band gaps
    Autorzy:
    Dissanayake, S. E.
    Wijewardena Gamalath, K. A. I. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/411904.pdf
    Data publikacji:
    2014
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Photonic crystal
    square lattice
    triangular lattice
    honeycomb lattice
    plane wave expansion
    mode field distribution
    GaAs
    dielectric kontrast
    filling fraction
    gap maps
    Opis:
    The plane wave expansion method was implemented in modelling and simulating the band structures of two dimensional photonic crystals with square, triangular and honeycomb lattices with circular, square and hexagonal dielectric rods and air holes. Complete band gaps were obtained for square lattice of square GaAs rods and honeycomb lattice of circular and hexagonal GaAs rods as well as triangular lattice of circular and hexagonal air holes in GaAs whereas square lattice of square or circular air holes in a dielectric medium ε = 18 gave complete band gaps. The variation of these band gaps with dielectric contrast and filling factor gave the largest gaps for all configurations for a filling fraction around 0.1.The gap maps presented indicated that TM gaps are more favoured by dielectric rods while TE gaps are favoured by air holes. The geometrical gap maps operating at telecommunication wavelength λ = 1.55 m showed that a complete band gap can be achieved for triangular lattice with circular and hexagonal air holes in GaAs and for honeycomb lattice of circular GaAs rods.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2014, 5; 58-88
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of Exciton-Polaritons
    Autorzy:
    De Silva, L. M. S.
    Wijewardena Gamalath, K. A. I. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1166216.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AlGaAs/AlAs
    CdSe/ZnS
    Exciton-polaritons
    GaAs
    distributed Bragg reflectors
    microcavity
    quantum well
    Opis:
    To study the generation of exciton polaritons in a quantum well embedded in a semiconductor Fabry-Pérot microcavity with distributed Brag reflectors, a simple semi-classical auxiliary differential equation based model is proposed. The solutions are obtained using FDTD method considering only the excitations from ground to next excited states and one single QW resonance. The simulations are presented for GaAs quantum well in Al0.1Ga0.9As microcavity and a ZnS quantum well embedded in CdSe microcavity with 12 DBR layers on either side. Model is proved to be stable and agrees with properties of polarization associated with polariton dispersion. Results show that GaAs is a better quantum well material to generate polaritons than CdSe.
    Źródło:
    World Scientific News; 2018, 106; 194-213
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nonlinear optical properties of photonic crystals
    Autorzy:
    Fernando, M. G. Pravini S.
    Wijewardena Gamalath, K. A. I. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177892.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AlGaAs
    All-optical switch
    FDTD
    GaAs
    Ge
    Kerr nonlinearity
    Limiter
    Photonic crystals
    ZnS
    side coupled Micro cavities
    Opis:
    A model for optical switching and limiting in 2D photonic crystals of square and hexagonal lattice structures having Kerr nonlinearity is introduced with a side-coupled cavity and a waveguide. MATLAB was used to implement FDTD algorithm with perfectly matched layer boundaries. Photonic crystals formed from AlGaAs, GaAs, ZnS and Ge, rods in air were simulated to obtain the optimal parameters. The best refractive index range for the proposed switch and the limiter to be operated is 2.5 to 3.2. The results showed best performance for group III-V materials. The lattice constant for the most commonly used telecommunication wavelength (1.55 µm) was found to be 0.5479 µm for AlGaAs and 0.550 µm for GaAs respectively. As an optical limiter, AlGaAs showed the best performance with the threshold refractive index change at 0.05.
    Źródło:
    World Scientific News; 2018, 97; 1-27
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies