- Tytuł:
- Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures
- Autorzy:
-
Gryglewicz, J
Stafiniak, A
Wosko, M
Prazmowska, J
Paszkiewicz, B - Powiązania:
- https://bibliotekanauki.pl/articles/174309.pdf
- Data publikacji:
- 2013
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
reactive ione etching
HEMT
AlGaN/GaN heterostructure - Opis:
- In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al fractions of 22, 25, 31 and 36% were examined. An impact of Al content in the heterostructures on the etch rates and surface morphology was investigated. The influence of used Cl2/BCl3/Ar gas mixture with varying of BCl3 flow on the etch rate of Al0.2Ga0.8N/GaN/sapphire, surface morphology and angle of mesa slope, was discussed.
- Źródło:
-
Optica Applicata; 2013, 43, 1; 27-33
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł