- Tytuł:
- Metal-titanium oxide / quantum dot porous silicon / silicon-metal solar cell
- Autorzy:
-
Abd, Ahmad Naji
Mishjil, Khudheir A.
Abdulsada, Ali Hamid
Habubi, N. F. - Powiązania:
- https://bibliotekanauki.pl/articles/1177996.pdf
- Data publikacji:
- 2018
- Wydawca:
- Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
- Tematy:
-
AFM
FTIR
TiO2
X-Ray diffraction
XRD
electrochemical etching p-type silicon wafer
nanocrystalline porous silicon - Opis:
- In this paper, the nanocrystalline porous silicon (PSi) films are prepared by electrochemical etching of p-type silicon wafer with current density 7 mA/cm2 and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
- Źródło:
-
World Scientific News; 2018, 96; 134-148
2392-2192 - Pojawia się w:
- World Scientific News
- Dostawca treści:
- Biblioteka Nauki
Artykuł