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Wyszukujesz frazę "Ismail, A." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Synthesized and characterization of pure and Er+3 doped ZnO nanoparticles by using laser ablation in ethanol
Autorzy:
Ismail, Raid A.
Habubi, Nadir F.
Powiązania:
https://bibliotekanauki.pl/articles/1191374.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
AFM
Er doping
Heterojunction
XRD
Zinc Oxide
nanocollidal suspension
Opis:
Pulsed laser ablation in ethanol at room temperature with laser fluence 4.62 J/cm2 was employed to synthesize pure zinc oxide (ZnO) and Er- doped ZnO nanocolloidal suspension. The structural properties were determined by using x-ray diffraction (XRD) method and was confirmed its hexagonal wurtzite structure. The photoluminescence spectra (PL), AFM and FTIR measurement of the synthesized pure and Er-doped ZnO is carried out. The photoluminescence spectra measurements show that all the samples have ultraviolet emission and green emission and the surface granular morphology. The FTIR spectra indicate the existence of Zn-O, Er-O-Er and Er-O stretching modes. Al/ZnO/P-Si/Al and Al/Er-ZnO/P-Si/Al photodetectors hetrojunction has two peaks of response located at 650 nm for and 790 nm and the first peak shifted to 550nm for the doped hetrojunction with max sensitivity 0.7A/W. The maximum specific detectivity is 4.3×1012 W-1•cm•Hz-1 and 3×1012 W-1 •cm•Hz-1 for undoped and doped hetrojunctions respectively. The values of the built-in potentials 0.9 volt for Al/ZnO/P-Si/Al heterojunction and 0.6 volt for Al/Er-ZnO/P-Si/Al hetrojunction.
Źródło:
World Scientific News; 2016, 33; 67-78
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and characterization of porous silicon layer prepared by photo-electrochemical etching in CH3OH:HF solution
Autorzy:
Hadi, H.A.
Ismail, R.A.
Habubi, N.F.
Powiązania:
https://bibliotekanauki.pl/articles/412262.pdf
Data publikacji:
2013
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
porous silicon
photo-electrochemical etching (PECE)
porosity
thickness
XRD
AFM
Opis:
Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer's formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77 %. The thickness of the layer formed during an anodization in constant current was 3.54nm in gravimetric method, while its value was 1.77nm by using the theoretical relation.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2013, 3; 29-36
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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