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    Wyświetlanie 1-3 z 3
    Tytuł:
    Investigation of degradation of electrical properties after thermal oxidation of p-type Cz-silicon wafers
    Autorzy:
    Maoudj, M.
    Bouhafs, D.
    Bourouba, N.
    Khelifati, N.
    El Amrani, A.
    Boufnik, R.
    Hamida Ferhat, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1054957.pdf
    Data publikacji:
    2017-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    81.16.Pr
    88.40.jj
    Opis:
    In this study we conducted thermal oxidation of Czochralski p-type <100> silicon wafers. The oxidation was carried out at temperatures in the range of 850-1000°C, in a gas mixture of N₂:O₂, in order to deposit a thin layer (10 nm) of thermal silicon dioxide (SiO₂), generally used in the surface passivation of solar cells. The measurements of effective minority carriers lifetime τ_{eff} using the quasi-steady-state photoconductance have shown degradation of different samples after oxidation process. The calculation of surface recombination velocity after the oxidation process at different temperatures, gave the same value of 40 cm s¯¹, showing a low surface recombination velocity and, therefore, a good surface passivation. Finally, a study based on sample illumination technique, allowed us to conclude that our samples are dominated by bulk Shockley-Read-Hall recombination, caused by Fe-related centers, thereby causing the degradation of the lifetime of minority carriers.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 3; 725-727
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimized Temperature in Phosphorous Diffusion Gettering Setup of Chromium Transition Metal in Solar Grade Multicrystalline p-Type Silicon Wafer
    Autorzy:
    Bouhafs, D.
    Khelifati, N.
    Kouhlane, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398753.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    81.05.Bx
    81.65.Tx
    87.15.Pc
    Opis:
    We have investigated in this work the effect of the temperature profile during homogeneous phosphorous diffusion gettering (PDG) on multicrystalline (mc-Si) silicon p-type wafers destined for photovoltaic solar cells. Temperatures were varied from 800°C to 950°C with time cycle of 90 minutes. Phosphorous profile of n⁺p junction was measured by secondary ion mass spectroscopy (SIMS) from 0.45 μm to 2.4 μm. Chromium concentration profile measured on the same samples by SIMS shows a high accumulated concentration of Cr atoms in the gettering layer at 900°C and 950°C, compared to samples obtained at 800°C and 850°C. The effective lifetime $(\tau_\text{eff})$ of minority charge carriers characterized by quasi-steady state photoconductance (QSSPC) is in correlation with these results. From the QSSPC measurements we have observed an amelioration of $\tau_\text{eff}$ from 7 μs before PDG to 26 μs in the samples after PDG, processed at 900°C. This indicates the extraction of a non-negligible concentration (5×10¹⁴ cm¯³ to 5×10¹⁵ cm¯³) of Cr from the bulk to the surface gettering layer, as observed in the chromium SIMS profiles. A light degradation of $\tau_\text{eff}$ (18 μs) is observed in the samples treated at 950°C due probably to a partial dissolution of the metallic precipitates, especially at the grain boundaries and in the dislocations vicinity. The related $\tau_\text{Cr-Impurity}$ lifetime value of about 8.5 μs is extracted, which is the result of interstitial $Cr_{i}$ or $Cr_{i}B_{s}$ pairs, proving their strongest recombination activity in silicon.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 690-693
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
    Autorzy:
    Miyamura, Y.
    Chen, J.
    Prakash, R.
    Jiptner, K.
    Harada, H.
    Sekiguchi, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363535.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    81.10.Fq
    61.72.Ff
    61.72.Hh
    61.72.Lk
    Opis:
    We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1024-1026
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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