Wszystkie pola: Lusakowski, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors
Autorzy:: Sakowicz, M.
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Gwarek, W.
Knap, W.
Boubanga, S.
Powiązania:: https://bibliotekanauki.pl/articles/1811983.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.40.Ba
52.40.Fd
85.30.Tv
07.57.Kp
Opis:: Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1337-1342
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors
Autorzy:: Boubanga-Tombet, S.
Nogajewski, K.
Teppe, F.
Knap, W.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Dyakonov, M.
Powiązania:: https://bibliotekanauki.pl/articles/1791357.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
84.40.x
85.30.Tv
85.35.p
73.20.Mf
Opis:: Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 939-940
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
Autorzy:: Grigelionis, I.
Fobelets, K.
Vincent, B.
Mitard, J.
De Jaeger, B.
Simoen, E.
Hoffman, T.
Yavorskiy, D.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1492960.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.My
85.30.Tv
Opis:: We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 933-935
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
Autorzy:: Videlier, H.
Dyakonova, N.
Teppe, F.
Consejo, C.
Chenaud, B.
Knap, W.
Lusakowski, J.
Tomaszewski, D.
Marczewski, J.
Grabiec, P.
Powiązania:: https://bibliotekanauki.pl/articles/1492958.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.Tv
Opis:: We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 927-929
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Terahertz Detection by the Entire Channel of High Electron Mobility Transistors
Autorzy:: Sakowicz, M.
Łusakowski, J.
Karpierz, K.
Knap, W.
Grynberg, M.
Köhler, K.
Valusis, G.
Gołaszewska, K.
Kamińska, E.
Piotrowska, A.
Caban, P.
Strupiński, W.
Powiązania:: https://bibliotekanauki.pl/articles/1811985.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.75.+a
78.20.Ls
85.30.Tv
07.57.Kp
Opis:: GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1343-1348
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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