- Tytuł:
- Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer
- Autorzy:
-
Wosiński, T.
Figielski, T.
Mąkosa, A.
Wrotek, S.
Dobrowolski, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1992612.pdf
- Data publikacji:
- 1998-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.Gk
73.50.Jt
85.30.Mn - Opis:
- Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
- Źródło:
-
Acta Physica Polonica A; 1998, 94, 3; 617-621
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł