- Tytuł:
- Ru/GaN(0001) Interface Properties
- Autorzy:
-
Wasielewski, R.
Grodzicki, M.
Sito, J.
Lament, K.
Mazur, P.
Ciszewski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1033790.pdf
- Data publikacji:
- 2017-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.47.Fg
73.30.+y
82.80.Pv - Opis:
- We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
- Źródło:
-
Acta Physica Polonica A; 2017, 132, 2; 354-357
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł