- Tytuł:
- Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment
- Autorzy:
-
Datsenko, L. I.
Misiuk, A.
Härtwig, J.
Briginets, A.
Khrupa, V. I. - Powiązania:
- https://bibliotekanauki.pl/articles/1931660.pdf
- Data publikacji:
- 1994-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.40.-z
61.70.-r - Opis:
- The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
- Źródło:
-
Acta Physica Polonica A; 1994, 86, 4; 585-590
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł