Autor: Bak, M - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment
Autorzy:: Szuszkiewicz, W.
Gębicki, W.
Bąk-Misiuk, J.
Domagała, J.
Leszczyński, M.
Hartwig, J.
Powiązania:: https://bibliotekanauki.pl/articles/1964169.pdf
Data publikacji:: 1997-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.30.+y
81.40.-z
73.60.Br
Opis:: AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
Źródło:: Acta Physica Polonica A; 1997, 91, 5; 1003-1007
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
Autorzy:: Bąk-Misiuk, J.
Domagała, J.
Trela, J.
Leszczyński, M.
Misiuk, A.
Härtwig, J.
Prieur, E.
Powiązania:: https://bibliotekanauki.pl/articles/1945264.pdf
Data publikacji:: 1996-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.40.-z
65.70.+y
Opis:: AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
Źródło:: Acta Physica Polonica A; 1996, 89, 3; 405-409
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation
Autorzy:: Khrupa, V. I.
Grigoryev, D. O.
Skorokhod, M. Ya.
Datsenko, L. I.
Bąk-Misiuk, J.
Powiązania:: https://bibliotekanauki.pl/articles/1931661.pdf
Data publikacji:: 1994-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.40.-z
61.70.-r
Opis:: Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α$\text{}_{1}}$ line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.
Źródło:: Acta Physica Polonica A; 1994, 86, 4; 591-596
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
Autorzy:: Bąk-Misiuk, J.
Domagała, J.
Paszkowicz, W.
Trela, J.
Żytkiewicz, Z. R.
Leszczyński, M.
Regiński, K.
Muszalski, J.
Härtwig, J.
Ohler, M.
Powiązania:: https://bibliotekanauki.pl/articles/1964092.pdf
Data publikacji:: 1997-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Ea
81.40.-z
68.55.Ln
61.10.Nz
Opis:: The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
Źródło:: Acta Physica Polonica A; 1997, 91, 5; 911-915
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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