- Tytuł:
- Design of Solar Cells p⁺/n Emitter by Spin-On Technique
- Autorzy:
-
El Amrani, A.
Boucheham, A.
Belkacem, Y.
Boufenik, R.
Boudaa, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1031365.pdf
- Data publikacji:
- 2017-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.15.KK
88.40.JJ
85.40.Ry - Opis:
- In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p⁺/n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N₂/O₂ gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910°C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5× 10²⁰ atoms/cm³ and 2.5× 10²⁰ atoms/cm³, respectively. The junction depth was around 0.3 μm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 μm.
- Źródło:
-
Acta Physica Polonica A; 2017, 132, 3; 717-719
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł