Temat: 77.55.Dj - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:: Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/2048120.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh
Opis:: Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 696-698
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
Autorzy:: Taube, A.
Kruszka, R.
Borysiewicz, M.
Gierałtowska, S.
Kamińska, E.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/1492515.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.55.dj
77.22.Ch
73.40.Qv
81.15.Gh
81.15.Cd
Opis:: The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja