- Tytuł:
- Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing
- Autorzy:
-
Čyvienė, J.
Dudonis, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1812041.pdf
- Data publikacji:
- 2008-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
51.10.+y
81.15.Ef
83.80.Ab - Opis:
- The chemical reactions are widely used for the layers of different composition formation. However, synthesis mechanism is a complicated process in thin films/layers system, and is not completely studied. The purpose of this paper was to analyze the kinetics of chemical compounds in reaction, to produce ZrO₂ thin films using arc evaporation and annealing (post-deposition), and to analyze them. The pure zirconium (Zr) and zirconium nitride (ZrN) were deposited using arc evaporation. 10% mol of aluminum was evaporated on a few Zr films. All deposited films were annealed in the air atmosphere gradually changing the temperature from 400°C to 1100°C in order to produce ZrO₂ films. The formation processes of the new phase were studied. Activation energy of the reactions was calculated. Structural properties were measured using X-ray diffraction, optical properties - using ellipsometry. Tetragonal phase of ZrO₂ was obtained in the annealing process of ZrO₂/Al thin film in the air atmosphere of 800°C.
- Źródło:
-
Acta Physica Polonica A; 2008, 114, 4; 769-777
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł