- Tytuł:
- Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
- Autorzy:
-
Zhuang, H.
Li, B.
Zhang, S.
Zhang, X.
Xue, Ch.
Wang, D.
Shen, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1813498.pdf
- Data publikacji:
- 2008-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.65.-k
81.05.Ea
81.15.Cd - Opis:
- High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 2; 723-730
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł