Autor: Borysiewicz, M. J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Tuning Transparent Supercapacitor Performance by Controlling the Morphology of its ZnO Electrodes
Autorzy:: Borysiewicz, M.
Wzorek, M.
Ekielski, M.
Kaczmarski, J.
Wojciechowski, T.
Powiązania:: https://bibliotekanauki.pl/articles/1032336.pdf
Data publikacji:: 2017-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 82.47.Uv
68.35.bg
68.55.ag
81.15.Cd
Opis:: Transparent supercapacitors were fabricated using nanostructures ZnO electrodes deposited using reactive magnetron sputtering. By fine tuning the deposition process parameters the electrodes with different morphologies were obtained, from hierarchical through sponge-like to nanocolumnar. The device performance related to the electrode morphology was assessed. It was found that the nanocolumnar electrodes provided best performance both in terms of effective device capacitance (18.3 μF/cm²) and transparency ( ≈ 100% in the visible range). The worst performance, with 80% lower effective capacitance, was obtained in the devices with the sponge-like morphology.
Źródło:: Acta Physica Polonica A; 2017, 131, 6; 1550-1553
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films
Autorzy:: Kaczmarski, J.
Borysiewicz, M.
Pągowska, K.
Kamińska, E.
Powiązania:: https://bibliotekanauki.pl/articles/1398691.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Gc
81.15.Cd
72.80.Ng
73.61.Jc
Opis:: Zn-O-N thin films fabricated by reactive radio frequency magnetron sputtering have been investigated for their compositional, structural, transport and optical properties. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous films with the Hall mobility within the range from 15 to 80 cm²/(V s). In addition, it has been observed that the Hall mobility increases for Zn-O-N. Since it has a narrower bandgap than ZnO, it is put forward that the high mobility is due to the valence band maximum in this material lying above the trap states in the gap commonly observable in ZnO. These traps originate from oxygen vacancies and are localized at the bottom of the band gap influencing the carrier mobility.
Źródło:: Acta Physica Polonica A; 2016, 129, 1; 150-152
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors
Autorzy:: Guziewicz, M.
Slysz, W.
Borysiewicz, M.
Kruszka, R.
Sidor, Z.
Juchniewicz, M.
Golaszewska, K.
Domagala, J.
Rzodkiewicz, W.
Ratajczak, J.
Bar, J.
Wegrzecki, M.
Sobolewski, R.
Powiązania:: https://bibliotekanauki.pl/articles/1492719.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.62.Bf
74.78.-w
81.15.Cd
81.15.Jj
Opis:: We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on $Al_2O_3$ and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × $10^6$ A/$cm^2$ at 4.8 K.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-076-A-079
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Ultrathin NbN Films for Superconducting Single-Photon Detectors
Autorzy:: Słysz, W.
Guziewicz, M.
Borysiewicz, M.
Domagała, J.
Pasternak, I.
Hejduk, K.
Rzodkiewicz, W.
Ratajczak, J.
Bar, J.
Węgrzecki, M.
Grabiec, P.
Grodecki, R.
Węgrzecka, I.
Sobolewski, R.
Powiązania:: https://bibliotekanauki.pl/articles/1504147.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.62.Bf
74.78.-w
81.15.Cd
81.15.Jj
Opis:: We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal $Al_2O_3$ and Si wafers, and $SiO_2$ and $Si_3N_4$ buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 200-203
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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