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Wyszukujesz frazę "78.15.+e" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Some Optical Aspects of Thermally Evaporated Lead Oxide Thin Films
Autorzy:
Aly, S.
Kaid, M.
El-Sayed, N.
Powiązania:
https://bibliotekanauki.pl/articles/1399301.pdf
Data publikacji:
2013-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.-g
81.15.-z
78.20.-e
78.20.Ci
78.40.-q
Opis:
The optical properties of lead oxide samples prepared using thermal evaporation technique on unheated glass substrates with different film thicknesses have been studied. The structural characteristics of a lead oxide sample was investigated using X-ray diffraction and it is confirmed to be in the amorphous state. The optical properties of the prepared films were studied by transmittance and reflectance measurements, and the integrated transmittance ($T_\text{UV}$, $T_\text{VIS}$ and $T_\text{Sol}$) in ultraviolet, visible and solar regions was calculated and found to be affected by film thickness. The dependence of absorption coefficient on wavelength was also reported. The energy gap was calculated and has been observed around 3.7 eV.
Źródło:
Acta Physica Polonica A; 2013, 124, 4; 713-716
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Pulsed Laser Power Annealing on Structural and Optical Characteristics of ZnSe Thin Films
Autorzy:
Aly, S.
Akl, Alaa
Howari, H.
Powiązania:
https://bibliotekanauki.pl/articles/1401905.pdf
Data publikacji:
2015-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
68.55.jd
68.55.ag
78.70.Ck
81.15.Dj
78.20.-e
Opis:
Samples of ZnSe of the same film thickness (320 nm) have been thermally evaporated on unheated quartz substrates using high purity powder. The prepared films were subjected to pulsed laser annealing of two different powers. X-ray diffraction studies revealed that the as-deposited samples were polycrystalline cubic (zinc-blende type) structure. As the annealing power increases, the crystallinity of ZnSe films was improved with preferential orientation along the (111) direction parallel to the substrate surface. Microstructural characterizations have been evaluated using the Debye-Scherrer formula. The absorption coefficient as well as the energy gap for the as-deposited and the annealed samples were also reported.
Źródło:
Acta Physica Polonica A; 2015, 128, 3; 414-418
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructure Formation during Amorphous Carbon Films Deposition
Autorzy:
Rutkuniene, Z.
Vigricaite, L.
Grigonis, A.
Powiązania:
https://bibliotekanauki.pl/articles/1366053.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.uj
81.15.-z
78.20.-e
82.80.Gk
Opis:
Influence of Cu particles for the carbon nanostructures formation during a-C:H films deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by $Ar^{+}$ ions for the Cu particles deposition on the silicon before a-C:H films formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the first stage of carbon film deposition. Structure of a:C-H films and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the film, then deposition time was 300 s.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1303-1305
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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