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Wyszukujesz frazę "81.40.Tv" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures
Autorzy:
Hajakbari, F.
Taheri Afzali, M.
Hojabri, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033487.pdf
Data publikacji:
2017-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Tv
81.07.Bc
81.15.cd
Opis:
In the present investigation, nanocrystalline NiO thin films were prepared by thermal oxidation annealing of DC magnetron sputtered Ni thin films on quartz substrates. The effect of annealing temperature on the films structural, morphological and optical properties was investigated. The XRD analysis shows that all prepared films were of NiO with cubic structure and (200) orientation. The thickness of NiO films was in range of 40-100 nm. The average crystallite size is found to increase from 16 to 36 nm and the optical band gap energy decreases from 3.62 to 3.38 eV by increasing the annealing temperature from 400°C to 600°C. The AFM and SEM results show that the annealing temperature effectively influences the surface morphology of the films.
Źródło:
Acta Physica Polonica A; 2017, 131, 3; 417-419
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Nano-Crystalline Zirconia Thin Films Prepared at Different Post-Oxidation Annealing Times
Autorzy:
Hojabri, A.
Pourmohammad, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398740.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Tv
81.07.Bc
81.15.cd
Opis:
The zirconia (ZrO₂) is one of the transition-metal oxides with most excellent optical properties which thus attracts great attention in optical engineering. A variety of methods were used for deposition of ZrO₂ thin films on different substrates. In the present work, homogenous, transparent nanocrystalline zirconia thin films were grown by thermal oxidation of zirconium (Zr) thin films deposited on quartz substrate using DC magnetron sputtering technique. The objective of this study is to reveal the effect of thermal oxidation time on structural and optical properties of deposited films. The XRD results revealed the formation of single phase ZrO₂ with tetragonal structure in the films at different thermal oxidation times. The optical constant of ZrO₂ thin films was calculated from the UV-visible transmission spectra. It was found that the increase of thermal oxidation time leads to the increase of transmittance and optical band gap energy of the films. The AFM results showed that thermal oxidation time influences the surface morphology of the films.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 647-649
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure, Optical and Electric Properties of Opal-Bismuth Silicate Nanocomposites
Autorzy:
Derhachov, M.
Moiseienko, V.
Kutseva, N.
Abu Sal, B.
Holze, R.
Pliaka, S.
Yevchyk, A.
Powiązania:
https://bibliotekanauki.pl/articles/1030991.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Bc
81.40.Tv
81.70.Fy
78.67.Bf
Opis:
Synthetic opals composed of 300 nm silica spheres are impregnated with a Bi₁₂SiO₂₀ melt at 1190 K. Structure and properties of the as-prepared samples are studied by employing the scanning electron microscopy, X-ray diffraction, and optical spectroscopy and direct current conductivity techniques. The nanocomposites are found to be multi-phase systems composed of Bi₁₂SiO₂₀, Bi₄Si₃O₁₂ and SiO₂ crystallites with an average linear size not less than 20 nm. Formation of Bi₄Si₃O₁₂ crystallites becomes possible as a result of changing in the Bi₂O₃-SiO₂ molar ratio due to the melting of silica spheres. The Raman intensity redistribution observed by surface scanning may be caused by both composition inhomogeneity and concentration of the exciting radiation field at composite defects. The "red" shift of photoluminescence band is observed. Activation energy of direct current conductivity is estimated as 1.1 eV.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 847-850
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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