Temat: 81.07.Gf - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Characteristic properties of Dy-Eu-Ce Co-doped ZrO₂ nanofibers fabricated via electrospinning
Autorzy:: Çıçek Bezır, N.
Evcın, A.
Kayali, R.
Kaşikçi Özen, M.
Esen, K.
Cambaz, E.
Powiązania:: https://bibliotekanauki.pl/articles/1070411.pdf
Data publikacji:: 2016-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.07.-b
81.07.Gf
Opis:: Zirconium oxide (ZrO₂) is one of the widely studied oxide materials because of its excellent electrical, mechanical and optical properties. In this study, undoped and Dy-Eu-Ce co-doped ZrO₂ nanofibers were fabricated by electrospinning method and their crystal structure, surface morphology, optical properties, electrical and electronic properties, and chemical properties have been analyzed using X-ray diffraction, scanning electron microscope (SEM), UV/VIS spectrometer, four point probe technique (FPPT) energy dispersive X-ray (EDX) measurements, respectively.
Źródło:: Acta Physica Polonica A; 2016, 130, 1; 300-303
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates
Autorzy:: Çiçek Bezir, N.
Evcin, A.
Okçu, H.
Kayali, R.
Kaleli, M.
Aldemir, D.
Powiązania:: https://bibliotekanauki.pl/articles/1031924.pdf
Data publikacji:: 2017-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.07.-b
73.61.Le
81.07.Gf
Opis:: GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I-V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.
Źródło:: Acta Physica Polonica A; 2017, 132, 3; 638-641
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: TEM Study of the Structural Properties of Nanowires Based on Cd, Zn, Te grown by MBE on Silicon Substrates
Autorzy:: Kaleta, A.
Kret, S.
Sanchez, A.
Bilska, M.
Kurowska, B.
Szczepańska, A.
Płachta, J.
Wojnar, P.
Wojciechowski, T.
Powiązania:: https://bibliotekanauki.pl/articles/1032910.pdf
Data publikacji:: 2017-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.07.-b
61.46.-w
62.23.Hj
81.07.Gf
61.46.Km
78.67.Uh
07.10.Pz
68.35.Gy
68.37.Lp
68.37.Og
68.37.Ma
Opis:: In this work we report on the atomic structures, elemental distribution, defects and dislocations of three types of semiconductor nanowires: ZnTe, CdTe, and complex ZnTe/(Cd,Zn)Te core/shell hetero-nanowires grown by a molecular beam epitaxy on (111) Si substrate using a vapor-liquid-solid mechanism. The structural properties and the chemical gradients were measured by transmission electron microscopy methods. The nanowires reveal mainly sphalerite structure, however wurtzite nanowires were also observed.
Źródło:: Acta Physica Polonica A; 2017, 131, 5; 1399-1405
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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