Autor: Shtepliuk, I. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Study of the clusterization of CdO phase in ZnCdO alloys by modeling fullerene-like Zn₄₄Cd₄O₄₈ cluster
Autorzy:: Ovsiannikova, L.
Kartuzov, V.
Shtepliuk, I.
Lashkarev, G.
Powiązania:: https://bibliotekanauki.pl/articles/1159858.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.22.-f
78.55.Et
81.05.Dz
81.07.Bc
Opis:: The structural, cohesive and electronic properties of fullerene-like isolated Zn₄₄Cd₄O₄₈ cluster with consideration of CdO phase clusterization are studied in the frames of density functional theory B3LYP/3-21G(d). It is revealed that an enlargement of CdO phase content in Zn₄₄Cd₄O₄₈ cluster leads to nonlinear rapid increase in cohesive energy and cluster stability, as well as band-gap energy shrinkage.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-41-A-43
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO
Autorzy:: Khomyak, V.
Slyotov, M.
Shtepliuk, I.
Slyotov, O.
Kosolovskiy, V.
Powiązania:: https://bibliotekanauki.pl/articles/1403644.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.67.Bf
81.05.Dz
81.07.Bc
Opis:: Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (ħω > $E_{g}$).
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1039-1041
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding
Autorzy:: Shtepliuk, I.
Lashkarev, G.
Khyzhun, O.
Kowalski, B.
Reszka, A.
Khomyak, V.
Lazorenko, V.
Timofeeva, I.
Powiązania:: https://bibliotekanauki.pl/articles/1492932.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.67.Bf
81.05.Dz
81.07.Bc
Opis:: ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire $c-Al_2O_3$ substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in $Ar-O_2$ atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 914-917
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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