- Tytuł:
- Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure
- Autorzy:
-
Datsenko, L.
Khrupa, V.
Krasulya, S.
Misiuk, A.
Härtwig, J.
Surma, B. - Powiązania:
- https://bibliotekanauki.pl/articles/1964116.pdf
- Data publikacji:
- 1997-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.40.-z
81.05.Cy - Opis:
- The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10$\text{}^{9}$ Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
- Źródło:
-
Acta Physica Polonica A; 1997, 91, 5; 929-933
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł