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    Wyświetlanie 1-7 z 7
    Tytuł:
    Precipitation Effects in Mg-Zn Alloys Studied by Positron Annihilation and Hardness Testing
    Autorzy:
    Hruška, P.
    Čížek, J.
    Vlček, M.
    Melikhova, O.
    Procházka, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196079.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    61.72.J-
    Opis:
    In the present work positron annihilation spectroscopy combined with Vickers hardness testing were employed in order to investigate precipitation effects in Mg-Zn alloys. It was found that incoherent precipitates of a metastable Zn-rich phase formed in the samples isochronally annealed above 200C cause hardening of the alloy.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 718-721
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Precipitation Effects in Mg-Tb and Mg-Tb-Nd Alloys
    Autorzy:
    Vlček, M.
    Čížek, J.
    Melikhova, O.
    Hruška, P.
    Procházka, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196115.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    61.72.J-
    Opis:
    Investigation of precipitation effects in solution treated Mg-Tb and Mg-Tb-Nd alloy was performed. Solution treated alloys were compared with samples deformed by high pressure torsion to examine influence of deformation on precipitation effects. Dislocations present in samples processed by high pressure torsion can serve as diffusion channels for atoms and also as nucleation sites for precipitates. Therefore precipitation of some phases in high pressure torsion deformed samples was observed at lower temperatures than in solution treated ones.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 744-747
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defects Studies of ZnO Single Crystals Prepared by Various Techniques
    Autorzy:
    Lukáč, F.
    Čížek, J.
    Procházka, I.
    Melikhova, O.
    Anwand, W.
    Brauer, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196118.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    61.72.J-
    Opis:
    The aim of the present work was a comparison of defects in ZnO crystals grown by various techniques available nowadays, namely hydrothermal growth, pressurized melt, Bridgman method growth and vapor phase growth. Positron annihilation spectroscopy was employed as a principal tool for characterization of defects in ZnO crystals grown by above mentioned various techniques. ZnO crystals can be divided into two groups: (i) hydrothermal grown crystals, which exhibit positron lifetime of 179-182 ps and (ii) ZnO crystals grown by the other techniques (pressurized melt, Bridgman method, vapor phase growth) which are characterized by the lower lifetimes falling in the range of 160-173 ps. Comparison of experimental data with ab initio theoretical calculations revealed that HT grown ZnO crystals contains Zn vacancies associated with hydrogen atom in a bond-centered site. On the other hand, ZnO crystals prepared by other techniques contain most probably stacking faults created by stresses induced by temperature gradients in the melt.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 748-751
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Grain Boundary Structure in Metals and Semiconductors as Probed by Positrons
    Autorzy:
    Kuriplach, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196087.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    61.72.Mm
    61.72.J-
    78.70.Bj
    Opis:
    Vacancy behavior and positron trapping at selected grain boundaries in iron, nickel, and zirconia are investigated theoretically. It is found that the grain boundary vacancy loses its free volume in metals at moderate temperatures whereas it is kept up to very high temperatures in zirconia. The consequences of these findings for positron annihilation studies of nanocrystalline materials are discussed.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 722-725
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Grain-Subgrain Structure and Vacancy-Type Defects in Submicrocrystalline Nickel at Low Temperature Annealing
    Autorzy:
    Kuznetsov, P.
    Lider, A.
    Bordulev, Yu.
    Laptev, R.
    Rakhmatulina, T.
    Korznikov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402134.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    61.72.J-
    61.72.Lk
    61.72.-y
    81.40.Ef
    78.70.Bj
    Opis:
    Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range Δ T=(20÷360)°C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range Δ T=(20÷180)°C. Subgrain growth with maximum =60 nm at 120°C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T>180°C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature Δ T=(20÷180)°C positrons are trapped at low-angle boundaries enriched by impurities. Within the range Δ T=(180÷360)°C the dominant trap is dislocations.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 714-717
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annihilation in Magnetite Nanopowders Prepared by Co-Precipitation Method
    Autorzy:
    Durak, K.
    Wiertel, M.
    Surowiec, Z.
    Miaskowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033944.pdf
    Data publikacji:
    2017-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Wx
    47.65.Cb
    78.70.Bj
    61.72.J-
    61.72.Mm
    68.37.Hk
    Opis:
    Nanosized iron oxide powders are materials considered with regard to its application in medical therapy called hyperthermia. Magnetite nanopowders with crystallite size varying from 6.6 to 11.8 nm have been prepared by the co-precipitation method. In this study a change of a crystallite size is driven mainly by varying of initial pH of water ammonia solution in which a process of magnetite precipitation runs. Crystallographic structures and phase composition obtained samples and the size of magnetite nanoparticles were determined by X-ray diffraction method. Positron lifetime spectroscopy has been used to assess defectiveness of microstructure. Experimental positron annihilation spectra were successfully resolved into three lifetime components. It appears that from point of view of microstructure the defects concentrations in studied nanopowder samples are very high which causes a saturation of positron trapping.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 5; 1593-1597
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profiling of Defects in He Implanted $SiO_2$
    Autorzy:
    Mariazzi, S.
    Toniutti, L.
    Brusa, R.
    Duarte Naia, M.
    Karbowski, A.
    Karwasz, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812538.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    68.55.-a
    61.82.Ms
    61.72.J-
    Opis:
    Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1447-1453
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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