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Wyszukujesz frazę "InGaN/GaN" wg kryterium: Wszystkie pola

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Springis, M.
    Tale, I.
    Yang, C. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041743.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 256-260
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Ivanov, V. Yu.
    Godlewski, M.
    Leszczyński, M.
    Perlin, P.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038288.pdf
    Data publikacji:
    2004-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
    Źródło:
    Acta Physica Polonica A; 2004, 106, 2; 273-279
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pressure Dependence of the Light Emission in Zinc-Blende InGaAs/GaAs and InGaN/GaN Quantum Wells
    Autorzy:
    Łepkowski, S.
    Gorczyca, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791301.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.D-
    62.50.-p
    81.40.Jj
    78.67.De
    Opis:
    We present theoretical study of the pressure coefficient of the light emission $(dE_{E}/dP)$ in compressively strained zinc-blende InGaAs/GaAs and InGaN/GaN quantum wells, grown in a (001) direction. We investigate the contributions to $dE_{E}$/dP arising from (i) third-order (nonlinear) elasticity, (ii) nonlinear elasticity, originating from pressure dependence of elastic constants, and (iii) nonlinear dependence of elastic constants on composition in InGaAs and InGaN alloys. The obtained results indicate that the use of nonlinear elasticity is essential for determination of $dE_{E}$/dP in the strained InGaAs/GaAs and InGaN/GaN quantum wells, while the inclusion of the nonlinear dependence of elastic constants on composition of InGaAs and InGaN alloys does not improve agreement between the theoretical end experimental values of $dE_{E}$/dP in the considered structures.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 857-858
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interplay between Internal and External Electric Field Studied by Photoluminescence in InGaN/GaN Light Emitting Diodes
    Autorzy:
    Staszczak, G.
    Khachapuridze, A.
    Grzanka, S.
    Czernecki, R.
    Piotrzkowski, R.
    Perlin, P.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492901.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Fi
    78.67.De
    85.60.Bt
    85.60.Jb
    Opis:
    We have studied a series of polar InGaN/GaN light emitting diodes, consisting of either a blue (440-450 nm) quantum well, or combination of blue and violet (410 nm) quantum wells (with indium content 18% and 10%, respectively). The blue quantum well was always placed close to p-type region of the particular LED. We found that the electroluminescence induced by low current is characterized by light emission from the blue quantum well only. In comparison, optical excitation of our LEDs leads to light emission with energies characteristic either for blue and/or violet quantum wells. The corresponding microphotoluminescence spectra evolve depending on external polarization and variable light intensity of excitation supplied by He-Cd laser. Interplay between built-in electric field and externally applied polarization/screening decides about the band structure profiles and thus radiative recombination mechanisms.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 891-893
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of Nonlinear Elasticity and Electromechanical Coupling on Optical Properties of InGaN/GaN and AlGaN/AlN Quantum Wells
    Autorzy:
    Łepkowski, S. P.
    Majewski, J. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046928.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.De
    62.20.Dc
    77.65.-j
    Opis:
    We present theoretical studies of effects of the nonlinear elasticity and the electromechanical coupling on the optical properties of InGaN/GaN and AlGaN/AlN quantum wells. In these structures, due to the lattice misfit between constituents, the quantum wells are compressively strained and the intrinsic hydrostatic pressure is present. Therefore, the nonlinear elasticity is investigated by taking into account the pressure dependence of elastic stiffness tensor for the strained quantum wells. We show that this effect leads to (i) decrease in the volumetric strain and (ii) increase in the polarization-induced built-in electric field in the quantum wells. Consequently, the interband transition energies in the quantum wells decrease when the nonlinear elasticity of nitrides is considered. On the other hand, we show that the effect of electromechanical coupling, i.e., co-existence of ordinary and converse piezoelectric effects results in increase in the interband transition energies in the considered quantum wells. It turns out that the influence of the nonlinear elasticity on the optical properties is stronger than the influence of electromechanical coupling for InGaN/GaN quantum wells, while for AlGaN/GaN the opposite situation is observed.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 237-242
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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