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    Wyświetlanie 1-3 z 3
    Tytuł:
    GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm
    Autorzy:
    Pieczarka, M.
    Podemski, P.
    Musiał, A.
    Ryczko, K.
    Sęk, G.
    Misiewicz, J.
    Langer, F.
    Höfling, S.
    Kamp, M.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399094.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.-b
    78.67.-n
    78.67.Pt
    Opis:
    Realization of the Bose-Einstein condensate can provide a way for creation of an inversion-free coherent light emitter with ultra-low threshold power. The currently considered solutions provide polaritonic emitters in a spectral range far below 1 μm limiting their application potential. Hereby, we present optical studies of InGaAs/GaAs based quantum well in a cavity structure exhibiting polaritonic eigenmodes from 5 to 160 K at a record wavelength exceeding 1 μm. The obtained Rabi splitting of 7 meV was almost constant with temperature, and the resulting coupling constant is close to the calculated QW exciton binding energy. This indicates the very strong coupling conditions explaining the observation of polaritons at temperatures where the exciton dissociation is already expected, and allows predicting that room temperature polaritons could still be formed in this kind of a system.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 817-820
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimizing the InGaAs/GaAs quantum dots for 1.3 μm emission
    Autorzy:
    Maryński, A.
    Mrowiński, P.
    Ryczko, K.
    Podemski, P.
    Gawarecki, K.
    Musiał, A.
    Misiewicz, J.
    Quandt, D.
    Strittmatter, A.
    Rodt, S.
    Reitzenstein, S.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1055140.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.-n
    78.67.Hc
    73.22.-f
    Opis:
    Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 386-390
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of the Non-Square InGaAsP/InP Quantum Wells in the Electric Field by Photoreflectance
    Autorzy:
    Kudrawiec, R.
    Sęk, G.
    Rudno-Rudziński, W.
    Misiewicz, J.
    Wojcik, J.
    Robinson, B. J.
    Thompson, D. A.
    Mascher, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035600.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.63.Hs
    78.67.-n
    66.10.Cb
    Opis:
    Non-square quantum wells in electric field have been investigated by photoreflectance and photoluminescence spectroscopies. The structures have been obtained by a post-growth modification (rapid thermal annealing) of standard 1.55μm InGaAsP-based laser structures that were grown by gas source molecular beam epitaxy. During rapid thermal annealing a migration of semiconductor atoms across quantum well interfaces changes the quantum well profile from a square well to a rounded well. The modification of the profile changes energy levels in the quantum well and in consequence a blue shift of the quantum well emission peak is observed in photoluminescence. In this paper the blue shift of the ground state transition of post-growth modified quantum well structures has been investigated by both photoluminescence and photoreflectance techniques. Also a blue shift of excited state transitions has been observed in photoreflectance spectra. Generally, a stronger blue shift for the ground state transition than for excited state transitions has been observed. Additionally, oscillator strengths for all quantum well transitions have been determined from photoreflectance spectra. It has been found that the oscillator strength is constant for all quantum well transitions despite of modification of the quantum well profile.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 649-657
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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