- Tytuł:
- Optical and electrical properties of highly doped ZnO:Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
- Autorzy:
-
Romanyuk, V.
Dmitruk, N.
Karpyna, V.
Lashkarev, G.
Popovych, V.
Dranchuk, M.
Pietruszka, R.
Godlewski, M.
Dovbeshko, G.
Timofeeva, I.
Kondratenko, O.
Taborska,, M.
Ievtushenko, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1156366.pdf
- Data publikacji:
- 2016-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.66.Hf
73.61.Ga - Opis:
- Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
- Źródło:
-
Acta Physica Polonica A; 2016, 129, 1a; A-36-A-40
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł