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    Wyświetlanie 1-13 z 13
    Tytuł:
    Optical Properties of Al$\text{}_{x}$Ga$\text{}_{1-x}$As$\text{}_{y}$Sb$\text{}_{1-y}$ Epitaxial Layers
    Autorzy:
    Świątek, K.
    Piskorski, M.
    Piotrowski, T. T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952715.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    Opis:
    Photoluminescence spectra of Al$\text{}_{x}$Ga$\text{}_{1-x}$As$\text{}_{y}$Sb$\text{}_{1-y}$ layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al$\text{}_{0.20}$Ga$\text{}_{0.80}$As$\text{}_{0.02}$Sb$\text{}_{0.98}$ band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1100-1102
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
    Autorzy:
    Pakula, K.
    Baranowski, J. M.
    Stępniewski, R.
    Wysmołek, A.
    Grzegory, I.
    Jun, J.
    Porowski, S.
    Sawicki, M.
    Starowieyski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933937.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.55.Cr
    Opis:
    The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 861-864
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence
    Autorzy:
    Kudrawiec, R.
    Latkowska, M.
    Sęk, G.
    Misiewicz, J.
    Ibáñez, J.
    Henini, M.
    Hopkinson, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791353.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    Opis:
    GaInNAs bulk-like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro-photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light-hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 930-932
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Two-Electron Transition in Homoepitaxial GaN Layers
    Autorzy:
    Fiorek, A.
    Baranowski, J. M.
    Wysmołek, A.
    Pakuła, K.
    Wojdak, M.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968067.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.55.Cr
    Opis:
    It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 742-744
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Hydrogen on the Electronic Properties of GaAs$\text{}_{1-y}$N$\text{}_{y}$ Heterostructures
    Autorzy:
    Bissiri, M.
    Gaspari, V.
    Baldassarri H. v. H., G.
    Ranalli, F.
    Polimeni, A.
    Capizzi, M.
    Nucara, A.
    Geddo, M.
    Fischer, M.
    Reinhardt, M.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2028796.pdf
    Data publikacji:
    2001-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    71.55.Eq
    78.55.Cr
    Opis:
    We have performed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs$\text{}_{1-y}$N$\text{}_{y}$/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to: (i) a progressive passivation of N-related recombination lines for low N content (y≈ 0.001); (ii) a sizable blue shift of the band gap in the "alloy" limit (y≈0.01). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N$\text{}^{-}$ -H$\text{}^{+}$ complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs$\text{}_{1-y}$N$\text{}_{y}$.
    Źródło:
    Acta Physica Polonica A; 2001, 100, 3; 365-371
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hydrogen Tuning of (InGa)(AsN) Optical Properties
    Autorzy:
    Baldassarri H. v. H., G.
    Ranalli, F.
    Bissiri, M.
    Gaspari, V.
    Polimeni, A.
    Capizzi, M.
    Nucara, A.
    Geddo, M.
    Fischer, M.
    Reinhardt, M.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2028813.pdf
    Data publikacji:
    2001-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    71.55.Eq
    78.55.Cr
    Opis:
    The effects of atomic hydrogen irradiation on the optical properties of (InGa)(AsN) single quantum wells investigated by means of photoluminescence spectroscopy. For increasing hydrogen dose, the photoluminescence band peak energy of each nitrogen-containing sample blue-shifts and for high hydrogen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band line width and by a decrease in the photoluminescence efficiency. Thermal annealing at 550ºC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpretation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading most likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.
    Źródło:
    Acta Physica Polonica A; 2001, 100, 3; 373-378
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers
    Autorzy:
    Wojdak, M.
    Baranowski, J. M.
    Suchanek, B.
    Pakuła, K.
    Jun, J.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968449.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    73.61.Ey
    78.55.Cr
    Opis:
    In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility 16 cm$\text{}^{2}$/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 1059-1062
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hopping Excitons in GaInNAs - Simulation οf Micro- and Macrophotoluminescence Spectra
    Autorzy:
    Baranowski, M.
    Latkowska, M.
    Kudrawiec, R.
    Misiewicz, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492914.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.55.Cr
    78.20.Bh
    Opis:
    Model of hopping excitons has been applied to explain the origin of sharp lines observed in microphotoluminescence spectra of GaInNAs layers. It has been shown that shape of the micro- and macrophotoluminescence spectra results from the exciton hopping between localizing centers and this phenomenon is responsible for the observation of sharp lines in microphotoluminescence experiment. In addition, the influence of different model parameters on photoluminescence spectra and their characteristic parameters such as the Stokes shift and full width at half maximum has been investigated.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 899-901
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence
    Autorzy:
    Moldavskaya, L. D.
    Shashkin,, V. I.
    Drozdov,, M. N.
    Daniltsev, V. M.
    Antonov, A. V.
    Yablonsky, A. N.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036025.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.55.Cr
    78.66.Fd
    Opis:
    We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 579-584
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Carriers Diffusion in GaAs/AlAs Type II Quantum Well
    Autorzy:
    Lesiak, A.
    Chwalisz, B.
    Wysmołek, A.
    Potemski, M.
    Stępniewski, R.
    Thierry-Mieg, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044497.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    75.75.+a
    Opis:
    The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 755-760
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Control of Photon Polarization in GaAs/AlAs Single Quantum Dot Emission
    Autorzy:
    Suffczyński, J.
    Trajnerowicz, A.
    Kazimierczuk, T.
    Piętka, B.
    Kowalik, K.
    Kossacki, P.
    Golnik, A.
    Nawrocki, M.
    Gaj, J. A.
    Wysmołek, A.
    Stępniewski, R.
    Potemski, M.
    Thierry-Mieg, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047725.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    78.47.+p
    Opis:
    We study polarization resolved correlation between photons emitted in cascaded biexciton-exciton recombination from a single quantum dot formed in type II GaAs/AlAs bilayer. Magnetic field induced transition from anisotropy controlled to the Zeeman controlled emission was demonstrated by a circular polarization correlation between the emitted photons. A simple model describing the effect allowed us to determine the anisotropic exchange splitting of the excitonic state. This method of the anisotropic exchange splitting determination can be useful in the case when other methods are not sensitive enough.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 461-466
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Application of High Pressure in Physics and Technology of III-V Nitrides
    Autorzy:
    Grzegory, I.
    Leszczyński, M.
    Krukowski, S.
    Perlin, P.
    Suski, T.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030388.pdf
    Data publikacji:
    2001-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.-h
    78.66.Fd
    73.61.Ey
    82.60.Lf
    78.55.Cr
    Opis:
    Due to high bonding energy of N$\text{}_{2}$ molecule, the III-V semiconducting nitrides, especially GaN and InN require high N$\text{}_{2}$ pressure to be stable at high temperatures necessary for growth of high quality single crystals. Physical properties of GaN-Ga(l)-N$\text{}_{2}$ system are discussed in the paper. On the basis of the experimental equilibrium p-T-x data and the quantum-mechanical modeling of interaction of N$\text{}_{2}$ molecule with liquid Ga surface, the conditions for crystallization of GaN were established. The crystals obtained under high pressure are of the best structural quality, having dislocation density as low as 10-100 cm$\text{}^{-2}$ which is several orders of magnitude better than in any other crystals of GaN. The method allows to grow both n-type substrate crystals for optoelectronics and highly resistive crystals for electronic applications. The physical properties of the pressure grown GaN measured to characterize both point defects and extended defects in the crystal lattice are discussed in the paper. A special attention is paid to the application of high pressure to reveal the nature of the point defects in the crystals and electric fields in GaN-based quantum structures. Due to their very high structural quality, the pressure grown crystals are excellent substrates for epitaxial growth of quantum structures. It opens new possibilities for optoelectronic devices, especially short wavelength high power lasers and efficient UV light emitting diodes. This is due to the strong reduction in dislocation densities in relation to existing structures (10$\text{}^{6}$-10$\text{}^{8}$ cm$\text{}^{-2}$) which are grown on strongly mismatched sapphire and SiC substrates. The experimental results on the epitaxial growth and physical properties of GaN-based device structures supporting above conclusions are discussed in the paper. The current development of blue laser technology in High Pressure Research Center is shortly reviewed.
    Źródło:
    Acta Physica Polonica A; 2001, 100, Supplement; 57-109
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Stępniewski, R.
    Pakuła, K.
    Kossacki, P.
    Golnik, A.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038084.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    75.75.+a
    68.65.Hb
    Opis:
    We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 517-521
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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