Autor: Pakula, K - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: An Estimate of the Energy Gap of InN from Measurements of the Fundamental Absorption Edge
Autorzy:: Trautman, P.
Pakuła, K.
Witowski, A. M.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/2044548.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Ey
78.40.Fy
78.30.Fs
78.66.Fd
81.05.Ea
Opis:: Optical absorption between 0.4 and 4.5 eV of an InN layer grown by metalorganic vapour phase epitaxy on sapphire was measured at 296 and 12 K. The layer was also characterized by measurements of the Hall effect and of infrared reflectivity in the region of the plasma edge, which determined the concentration, mobility, and effective mass of electrons in the conduction band. The energy gap of InN was estimated to be equal to 0.9±0.2 eV. It was obtained from the spectral position of the fundamental absorption edge. Corrections to the energy gap resulting from the broadening of the fundamental absorption edge, from the Burstein-Moss shift, and from a band-gap shrinkage due to the impurity potential were included.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 903-908
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers
Autorzy:: Wojdak, M.
Baranowski, J. M.
Suchanek, B.
Pakuła, K.
Jun, J.
Suski, T.
Powiązania:: https://bibliotekanauki.pl/articles/1968449.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
73.61.Ey
78.55.Cr
Opis:: In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility 16 cm$\text{}^{2}$/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 1059-1062
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Two-Electron Transition in Homoepitaxial GaN Layers
Autorzy:: Fiorek, A.
Baranowski, J. M.
Wysmołek, A.
Pakuła, K.
Wojdak, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/1968067.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.55.Cr
Opis:: It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 742-744
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:: Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:: We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
Autorzy:: Pakula, K.
Baranowski, J. M.
Stępniewski, R.
Wysmołek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K.
Powiązania:: https://bibliotekanauki.pl/articles/1933937.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.55.Cr
Opis:: The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 861-864
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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