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Wyświetlanie 1-6 z 6
Tytuł:
Optical Properties of $As_{36}Te_{42}Ge_{10}Si_{12}$ Thin Films
Autorzy:
Hegab, N.
El-Mallah, H.
Powiązania:
https://bibliotekanauki.pl/articles/1535744.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.20.Ci
78.66.-w
78.68.+m
Opis:
Thermally evaporated $As_{36}Te_{42}Ge_{10}Si_{12}$ amorphous chalcogenide films were prepared in a vacuum of $10^{-5}$ Torr on to glass substrates hold at about 300 K during the deposition process. Measurements of the optical properties have been made. The optical transmittance and reflectance spectra of films in the thickness range 155-395 nm were measured in the wavelength λ range 500-2500 nm. The refractive index n, the extinction coefficient k and the absorption coefficient α were calculated for the studied films. It is found that both n and k are independent on the film thickness. The refractive index n has anomalous behavior for the wavelength λ range 500-1500 nm, while it has normal dispersion for the wavelength greater than 1500 nm. The optical energy gap was estimated from absorption coefficient. The allowed optical transitions were found to be nondirect transitions with optical gap of 1.08 eV for the sample under test. The effect of annealing on the obtained optical parameters was also investigated.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 637-642
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes in Optical Properties of Molecular Nanostructures
Autorzy:
Vučenović, S.
Šetrajčić, J.
Markoski, B.
Mirjanić, D.
Pelemiš, S.
Škipina, B.
Powiązania:
https://bibliotekanauki.pl/articles/1537873.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.+f
78.20.-e
78.66.-w
78.67.-n
Opis:
This paper represents an overview about exciton systems in the molecular nanostructures (ultra thin films and superlattices) and their implications on optical properties, primarily on absorption coefficient, which is given in the form of dielectric permittivity. With utilization of Green's function method, we have calculated dispersion law, spectral weight of exciton states and dielectric permittivity for every type of nanostructures. All obtained results are compared with optical properties in bulk crystals. Dielectric permittivity in all types of nanostructures shows very narrow and discrete dependence of external electromagnetic field frequency, which is a consequence of the expressed quantum effects, very thin thickness in these structures (or at least one dimension confinement) and boundary conditions.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 764-767
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interpretation of Switching Properties of $InGaSe_2$ Single Crystal
Autorzy:
Al Orainy, R.
Powiązania:
https://bibliotekanauki.pl/articles/1489875.pdf
Data publikacji:
2012-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.66.-w
73.61.Ga
74.25.Gz
Opis:
The goal of this paper is to present experimental results of the switching effect and analyze qualitatively the influence of various factors, such as temperature, light illumination and sample thickness on switching behavior of the high quality ternary chalcogenide semiconductor $InGaSe_2$. Current-controlled negative resistance of $InGaSe_2$ single crystals has been observed for the first time. It has been found that indium gallium diselenide single crystals exhibit bistable or memory switching. The switching process takes place with both polarities on the crystal and has symmetric shapes. Current-voltage characteristics of $Ag-InGaSe_2-Ag$ structures exhibit two distinct regions, high resistance OFF state and low-resistance ON state having negative differential resistance. $InGaSe_2$ is a ternary semiconductor exhibiting S-type I-V characteristics. The specimen under test showed threshold switching with critical field of the switching being $10^3$ V/cm at room temperature.
Źródło:
Acta Physica Polonica A; 2012, 121, 3; 666-672
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Parkhomenko, I.
Mudryi, A.
Wendler, E.
Zukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1198877.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1288-1291
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Komarov, A.
Mudryi, A.
Wesch, W.
Wendler, E.
Zuk, J.
Kulik, M.
Ismailova, G.
Powiązania:
https://bibliotekanauki.pl/articles/1400427.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:
Nanosized crystallites have been synthesized in the Si and $SiO_2//Si$ structures by means of As (170 keV, $3.2 × 10^{16} cm^{-2}$) and In (250 keV, $2.8 × 10^{16} cm^{-2}$) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Dunetz, B.
Wesch, W.
Wendler, E.
Karwat, C.
Powiązania:
https://bibliotekanauki.pl/articles/1503945.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 87-90
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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